Characterization of GaInP avalanche transit time device in millimeter-wave frequencies

Author

Meng, C.C. ; Liao, G.R.

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1715

Abstract

GaInP material has high breakdown electrical fields and thus is suitable to avalanche transit time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large signal model in this paper. The simulation confirms that GaInP IMPATT device has the power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice-match and high etching selectivity between GaInP and GaAs materials.

Keywords

III-V semiconductors; IMPATT diodes; gallium compounds; indium compounds; millimetre wave diodes; power semiconductor diodes; semiconductor device models; 100 GHz; 500 K; GaInP; GaInP avalanche transit time device; breakdown electrical field; etching selectivity; large signal model; lattice match; millimeter-wave IMPATT device; power density; simulation; Avalanche breakdown; Circuit simulation; Electric breakdown; Etching; Gallium arsenide; Integrated circuit technology; MIMICs; Millimeter wave technology; Signal analysis; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700711

Filename

700711