DocumentCode
3065956
Title
Technique and instrument for the characterization of deep traps in GaAs MESFET structures
Author
Gorev, N.B. ; Kodzespirova, I.F. ; Kostylev, S.A. ; Kovalenko, Yu.A. ; Prokhorov, E.F.
Author_Institution
Inst. of Tech. Mech., Acad. of Sci., Ukraine
fYear
1998
fDate
1998
Firstpage
668
Lastpage
669
Abstract
The effective concentration of vacant deep traps in the buffer layer and substrate of a GaAs MESFET structure governs the overall effect of these traps on the MESFET performance. The onset of emptying of the deep traps at the layer-layer interfaces is responsible for the rising portion of the low-frequency capacitance-voltage characteristic. A low-frequency capacitance-voltage technique, which uses this effect for the determination of the effective concentration of vacant deep traps, is presented together with an instrument to realize it
Keywords
III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; GaAs; MESFET structure; buffer layer; deep traps; low-frequency capacitance-voltage characteristic; trap concentration; Buffer layers; Capacitance; Capacitance-voltage characteristics; Conductive films; Frequency; Gallium arsenide; Instruments; MESFETs; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785978
Filename
785978
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