GaN/AlGaN HFETs fabricated on a SiC substrate

Author

Uren, M.J. ; Martin, T. ; Birbeck, J.C. ; Balmer, R. ; Hughes, B.T. ; Guest, J.J. ; Hydes, A.J. ; Willis, H. ; Jelfs, T.

Author_Institution

Defence Evaluation & Res. Agency, Great Malvern, UK

fYear

2000

fDate

2000

Firstpage

71

Lastpage

75

Abstract

Self-heating in GaN/AlGaN HFETs fabricated on sapphire and silicon carbide substrates has been compared. Pulse I-V measurements showed that the thermal resistance of devices on SiC substrates was about 5 lower than for sapphire. This demonstrates the need for SiC substrates to dissipate the enormous power density in these devices

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; thermal resistance; wide band gap semiconductors; Al₂O₃; GaN-AlGaN; GaN/AlGaN HFET; SiC; fabrication; microwave power transistor; power dissipation; pulse I-V characteristics; sapphire substrate; self-heating; silicon carbide substrate; thermal resistance; Aluminum gallium nitride; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Pulse measurements; Silicon carbide; Substrates; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919032

Filename

919032