• DocumentCode
    3066164
  • Title

    Ultra-broadband nonlinear PHEMT modelling using TOPASTM

  • Author

    McPherson, D.S. ; Elgaid, K. ; Thayne, I.G. ; Robertson, I.D. ; Lucyszyn, S.

  • Author_Institution
    Dept. of Electron. Eng., Surrey Univ., Guildford, UK
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    85
  • Lastpage
    88
  • Abstract
    This paper presents the use of a nonlinear TOPASTM model to describe the behaviour of an AlGaAs/InGaAs/GaAs PHEMT device. The extracted model features excellent agreement at DC and for small-signal excitation up to 120 GHz. The model is implemented by the IMST for Agilent EDA´s Series IVTM and ADSTM circuit simulators
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; 120 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs PHEMT; DC characteristics; Series ADS; Series IV; TOPAS; circuit simulator; parameter extraction; small-signal excitation; ultra-broadband nonlinear model; Analytical models; Circuit simulation; Electronic design automation and methodology; Feature extraction; Gallium arsenide; MMICs; Nanoelectronics; Nonlinear circuits; PHEMTs; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on
  • Conference_Location
    Glasgow
  • Print_ISBN
    0-7803-6550-X
  • Type

    conf

  • DOI
    10.1109/EDMO.2000.919035
  • Filename
    919035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3066164