Microwave characteristics of meander inductors fabricated by 3D self-assembly

Author

Dahimann, G.W. ; Yeatman, Eric M.

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

fYear

2000

fDate

2000

Firstpage

128

Lastpage

133

Abstract

A new self-assembly process is presented which allows the fabrication of 3-dimensional metal structures in a fully parallel low temperature process. The fabrication method is suitable as a post-process so as to integrate inductors on radio- and microwave frequency ICs, with the aim of reducing losses and parasitic capacitance by separating the coil from the substrate. Meandered microwave inductors have been fabricated on a low resistivity silicon substrate, and a peak Q of 11 was measured for a 2 nH inductor, compared to a peak Q of 4 for the same structure in proximity to the substrate

Keywords

Q-factor; inductors; microwave integrated circuits; self-assembly; Q-factor; Si; fabrication; loss; meander inductor; microwave IC; microwave characteristics; parallel low temperature process; parasitic capacitance; radiofrequency IC; self-assembly; silicon substrate; three-dimensional metal structure; Coils; Conductivity; Fabrication; Inductors; Microwave frequencies; Parasitic capacitance; Q measurement; Self-assembly; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 2000 8th IEEE International Symposium on

Conference_Location

Glasgow

Print_ISBN

0-7803-6550-X

Type

conf

DOI

10.1109/EDMO.2000.919045

Filename

919045