DocumentCode
3066990
Title
A multilevel analog storage memory using source-side injection flash array
Author
Liu, Chun-Mai ; Brennan, James, Jr. ; Guo, Ping ; Holzmann, Peter ; Klinger, Pavel ; Kordesch, Albert V. ; Kwan, Ming ; Liu, I-Sheng ; Su, Ken ; Wang, Chih-Hsin ; Wang, Hai ; Yoon, Sukyoon
Author_Institution
Inf. Storage Devices, San Jose, CA, USA
fYear
1999
fDate
1999
Firstpage
187
Lastpage
190
Abstract
A multilevel storage technology with resolution approaching 8-bits is developed for storing analog signals directly into a memory array of source-side injection flash EEPROM. This is achieved by devising a read and programming scheme, by optimizing a memory cell layout, and by integrating mixed-mode capabilities into the base digital flash process
Keywords
EPROM; analogue storage; cellular arrays; flash memories; low-power electronics; memory architecture; 8 bit; EEPROM; base digital flash process; memory array; memory cell layout; mixed-mode capabilities; multilevel analog storage memory; programming scheme; resolution; source-side injection flash array; Analog memory; Array signal processing; Costs; Current measurement; EPROM; Flash memory; Nonvolatile memory; Robustness; Signal resolution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1999. International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-5620-9
Type
conf
DOI
10.1109/VTSA.1999.786031
Filename
786031
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