DocumentCode
3069988
Title
Epitaxial growth of CeO2(100) films on Si(100) substrates by dual ion beam reactive sputtering
Author
Kang, F. ; Xiong, G.C. ; Lian, G.J. ; Wang, Y.Y. ; Han, R.Q.
Author_Institution
Inst. of Microelectron., Beijing Univ., China
fYear
1998
fDate
1998
Firstpage
823
Lastpage
825
Abstract
The epitaxial growth of CeO2(100) films on (100) silicon substrates by dual ion beam sputtering has been studied. The measurements of X-ray θ-2θ pattern, φ-scan, and rocking curve indicated that the CeO2 films had good epitaxial characteristics with (100) orientation. The influences of the substrate temperature, the oxygen pressure, and amorphous SiO2 layer of the Si substrate surface on the epitaxial growth of the CeO2 layer were investigated
Keywords
cerium compounds; crystal structure; dielectric thin films; elemental semiconductors; silicon; sputter deposition; vapour phase epitaxial growth; φ-scan; (100) orientation; CeO2; CeO2(100) films; Si; Si(100) substrates; SiO2; X-ray &thetas;-2&thetas; pattern; amorphous SiO2 layer; dual ion beam reactive sputtering; epitaxial growth; oxygen pressure; rocking curve; substrate temperature; Amorphous materials; Crystallization; Dielectric substrates; Epitaxial growth; Ion beams; Semiconductor films; Silicon on insulator technology; Sputtering; Temperature; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.786190
Filename
786190
Link To Document