p-type doped channel FETs using strained and lattice matched InAlAs/InGaAs heterostructures

Author

Chan, Y. ; Pavlidis, D.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

17

Lastpage

20

Abstract

Lattice matched (x=0.53) and strained (x=0.65) In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As p-doped dual-channel FETs were fabricated and investigated experimentally. This material system offers a high carrier velocity and large bandgap discontinuity as required for high-speed operation. The design and the DC and high-frequency characteristics of the FETs are reported. The strained design enhances the intrinsic transconductance from 23 mS/mm to 46.5 mS/mm using 1.0- mu m-long gates. The cutoff frequency also improves from 1.0 GHz to 1.5 GHz.<>

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 1 GHz; 1 micron; 1.5 GHz; 23 mS; 46.5 mS; DC characteristics; In/sub 0.52/Al/sub 0.48/As-In/sub x/Ga/sub 1-x/As; cutoff frequency; gate length; high carrier velocity; high-frequency characteristics; high-speed operation; intrinsic transconductance; large bandgap discontinuity; lattice matched heterostructures; p-doped dual-channel FETs; stained heterostructures; Doping; Effective mass; FETs; Frequency; Indium compounds; Indium gallium arsenide; Lattices; MODFET integrated circuits; Stress; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202979

Filename

202979