Magnetically stabilized Kyropoulos and Czochralski growth of InP

Author

Bachowski, S. ; Bliss, D. ; Ahern, B. ; Hilton, R. ; Adamski, J. ; Carlson, D.

Author_Institution

Rome Air Dev. Center, Hanscom, MA, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

30

Lastpage

34

Abstract

A comparison is made between the magnetic liquid-encapsulated-Kyropoulos (MLEK) method and the magnetic liquid-encapsulated-Czochralski (MLEC) method for bulk growth of InP. The application of a magnetic field was observed to alter the interface shape and doping distribution in both LEK and LEC. For MLEC with the proper magnetic field strength, dopant striations can be reduced. In contrast, for MLEK with corotation, striations remained unchanged when a magnetic field was applied. However, for MLEK growth down with no rotation a uniform local dopant distribution with no growth striations is apparent. It is confirmed that MLEK growth in a low-gradient environment yields low-dislocation-density crystals.<>

Keywords

III-V semiconductors; crystal growth from melt; doping profiles; indium compounds; magnetic field effects; semiconductor growth; Czochralski growth; InP; MLEC; MLEK; dopant striations; doping distribution; interface shape; low-dislocation-density crystals; low-gradient environment; magnetic LEC growth; magnetic field; magnetic liquid encapsulated Kyropoulos growth; Boron; Crystals; Fluctuations; Furnaces; Gaussian processes; Indium phosphide; Magnetic field measurement; Magnetic fields; Temperature dependence; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202982

Filename

202982