Growth of large diameter InP single crystals by the phosphorus vapor controlled LEC method

Author

Kohiro, K. ; Kainosho, K. ; Shimakura, H. ; Fukui, T. ; Oda, O.

Author_Institution

Nippon Min. Co. Ltd., Saitama, Japan

fYear

1990

fDate

23-25 April 1990

Firstpage

35

Lastpage

38

Abstract

Large-diameter InP Single crystals (60 mm and 3 in) have been grown by a phosphorus-vapor-controlled liquid-encapsulated-Czochralski (PC-LEC) method in which the pulling rod is not sealed by an encapsulant but by a mechanical seal. The advantage of this technology is that the crystal growth can be performed in an industrial setting because of the ease of instrumentation. Both S-doped and Fe-doped single crystals have been grown. In the case of S-doped crystals, the dislocation free area was greatly increased compared with the conventional LEC method. A 3-in Fe-doped InP crystal with a dislocation density lower than 5*10/sup 4/ cm/sup -2/ was also grown.<>

Keywords

III-V semiconductors; crystal growth from melt; dislocation density; indium compounds; semiconductor growth; 3 in; 60 mm; InP:Fe; InP:S; LEC growth; P vapour controlled growth; crystal growth; dislocation density; dislocation free area; large diameter InP single crystals; liquid-encapsulated-Czochralski; mechanical seal; Annealing; Crystals; Electrodes; Etching; Furnaces; Indium phosphide; Reservoirs; Semiconductor device measurement; Temperature control; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.202983

Filename

202983