Expertise, optimisation and control of InP and related technologies by scanning photoluminescence measurements

Author

Krawczyk, S. ; Schohe, K. ; Garrigues, M. ; Tardy, J.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1990

fDate

23-25 April 1990

Firstpage

228

Lastpage

233

Abstract

It is shown how scanning photoluminescence (SPL) measurements can be used to obtain information about, to optimize, and to control InP and related compound semiconductor technologies. It is shown how the PL intensity from an InP substrate varies after successive steps during four different passivation processes, and the information gained thereby is discussed. An example is presented to demonstrate how SPL measurements can be used to optimize the gate recess step in the realization of InP MISFETs. Two possibilities for the routine inline control of successive steps in the processing of compound semiconductor devices using SPL measurements are described: automatic recognition and counting of defects appearing on SPL images (most of which cannot be revealed by optical microscopy) and analysis of statistical parameters describing the SPL data.<>

Keywords

III-V semiconductors; indium compounds; insulated gate field effect transistors; luminescence of inorganic solids; passivation; photoluminescence; semiconductor technology; InP; InP substrate; MISFETs; automatic recognition; defect counting; gate recess step; inline control; optimisation; passivation processes; scanning photoluminescence; semiconductor technologies; statistical parameters; Automatic control; Indium phosphide; MISFETs; Optical control; Optical microscopy; Passivation; Photoluminescence; Semiconductor device measurement; Semiconductor devices; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203023

Filename

203023