Polarization-dependent frequency responses of 1.3- mu m InGaAsP/InP BH-VPR semiconductor lasers

Author

Yu, B. ; Liu, J. ; LaCourse, J.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

249

Lastpage

254

Abstract

Frequency responses of 1.3- mu m InGaAsP/InP semiconductor lasers emitting in both transverse-electric and transverse-magnetic polarizations have been measured. It is found that lasers with different polarization-dependent power-versus-current characteristics show different polarization-dependent frequency responses. A polarization-dependent rate-equation model has been used with small-signal analysis to simulate the observations. The relative modulation bandwidths and the low-frequency modulation of the two polarizations can be explained. This model does not fit well at high frequencies because of the parasitics.<>

Keywords

III-V semiconductors; frequency response; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical modulation; semiconductor junction lasers; 1.3 micron; BH-VPR semiconductor lasers; InGaAsP-InP; TE polarisation; low-frequency modulation; modulation bandwidths; polarization-dependent frequency responses; polarization-dependent rate-equation model; small-signal analysis; transverse-magnetic polarizations; Frequency conversion; Frequency response; Indium phosphide; Laser modes; Laser theory; Optical polarization; Power lasers; Semiconductor lasers; Semiconductor optical amplifiers; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203026

Filename

203026