An indium phosphide diffused junction field effect transistor

Author

Zeisse, C.R. ; Nguyen, R. ; Vu, T.T. ; Messick, L.J. ; Moazed, K.L.

Author_Institution

US Naval Ocean Syst. Center, San Diego, CA, USA

fYear

1990

fDate

23-25 April 1990

Firstpage

308

Lastpage

311

Abstract

A junction field effect transistor (JFET) that meets the numerical requirements of an electrooptic receiver sensitive to 1.3 and 1.55 mu m optical radiation is reported. It was made by diffusing zinc into an epitaxial channel of indium phosphide. Low-frequency characterization showed that it has a transconductance of 240 mS/mm, a capacitance of 3.25 pF/mm, a gate-to-source leakage current of 10 nA at a bias of -4 V, and a one week stability of 3 mA out of 145 mA under the application of constant bias. The calculated unity current gain frequency is 12 GHz. The device should be suitable for wideband DC coupled integrated circuits made with InP-based materials.<>

Keywords

III-V semiconductors; indium compounds; junction gate field effect transistors; leakage currents; optical communication equipment; receivers; 1.3 micron; 1.55 micron; 10 nA; 12 GHz; 240 mS; InP; InP:Zn; JFET; diffused junction field effect transistor; electrooptic receiver; gate-to-source leakage current; transconductance; unity current gain frequency; wideband DC coupled integrated circuits; Capacitance; Circuit stability; FETs; Frequency; Indium phosphide; Leakage current; Optical receivers; Optical sensors; Transconductance; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1990. Second International Conference.

Conference_Location

Denver, CO, USA

Type

conf

DOI

10.1109/ICIPRM.1990.203037

Filename

203037