DocumentCode
3073369
Title
Tertiarybutylarsine as a substitute for AsH3: application to InGaAs/InP photonic integrated circuits
Author
Miller, B. ; Young, M. ; Koren, U. ; Koch, T. ; Oron, M. ; Gnall, R. ; Zucker, J. ; Jones, K. ; Hernandez-Gil, F. ; DeMiguel, J.
Author_Institution
AT&T Bell Lab., Holmdel, NJ, USA
fYear
1990
fDate
23-25 April 1990
Firstpage
161
Lastpage
164
Abstract
It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH/sub 3/-grown layers. As a consequence conventional InGaAsP lasers at 1.3 mu m were grown by TBA and were found to have properties as good as those of AsH/sub 3/ lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH/sub 3/ are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.<>
Keywords
III-V semiconductors; directional couplers; electro-optical devices; gallium arsenide; indium compounds; integrated optoelectronics; optical modulation; optical switches; optical waveguide components; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; AsH/sub 3/ grown layers; InGaAs-InP photonic integrated circuits; MOVPE growth; PIC circuits; TBA; four-port directional coupler optical switch; multi-quantum well lasers; optical properties; photonic integrated circuits; quantum-confined Stark effect modulator structures; semiconductors; strained-layer MQW lasers; tertiarybutylarsine; Ash; Directional couplers; Histograms; Indium gallium arsenide; Indium phosphide; Optical materials; Optical switches; Optical waveguides; Quantum well devices; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1990. Second International Conference.
Conference_Location
Denver, CO, USA
Type
conf
DOI
10.1109/ICIPRM.1990.203066
Filename
203066
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