Electromigration-limited lifetime of aluminum bond pads

Author

Hommel, Martina ; Penka, Sabine ; Ungar, Franz

Author_Institution

Infineon Technol. AG, Munchen, Germany

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

86

Lastpage

89

Abstract

The semiconductor industry has replaced aluminum by copper metallization because copper has a stronger electromigration resistance combined with lower resistivity. Since all the design current has to go through the aluminum bond pads, the electromigration robustness of the bond pads plays a decisive role. For reliable product operation, knowledge of the maximum current which can be carried by the bond pads is absolutely necessary. Furthermore, the product area can be minimized by an optimization of the number of pads. In this work, tests have been performed to characterize the bond pads regarding the influence of pad design, current path, probing and aluminum thickness on the electromigration properties.

Keywords

aluminium; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; voids (solid); 200 mA; 90 nm; Al; aluminum bond pads; aluminum thickness; bond pad maximum current capacity; current flow; current path; electromigration resistance; pad electromigration reliability; pad electromigration-limited lifetime; pad number optimization; probe area; probing; product area minimization; voiding; Aluminum; Bonding; Conductivity; Copper; Electromigration; Electronics industry; Metallization; Performance evaluation; Robustness; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2004 IEEE International

Print_ISBN

0-7803-8517-9

Type

conf

DOI

10.1109/IRWS.2004.1422745

Filename

1422745