DocumentCode
3073798
Title
Dopant influence on polysilicon capacitor oxide failure
Author
Towner, Janet M. ; Naughton, John J.
Author_Institution
AMI Semicond., Pocatello, ID, USA
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
145
Lastpage
147
Abstract
In this work, we investigate polysilicon capacitor oxide defectivity as a function of dopant contamination in a 0.5 μm mixed signal process. Experiments show that shallow n and p type dopant implants, used to mimic a cross contamination problem discovered in a PECVD cluster tool, can significantly degrade oxide integrity. Various possible mechanisms of the increased defectivity are discussed.
Keywords
MOS capacitors; doping profiles; plasma CVD; surface contamination; 0.5 micron; PECVD cluster tool; Si-SiO2; capacitor oxide integrity degradation; dopant cross contamination; exposed capacitor oxide surface; integrated capacitors; interpolysilicon capacitive structures; mixed signal process; n type dopant implants; oxide defectivity; p type dopant implants; polysilicon capacitor oxide failure; Ambient intelligence; Boron; Capacitors; Contamination; Dielectrics; Elevators; Implants; Oxidation; Signal processing; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN
0-7803-8517-9
Type
conf
DOI
10.1109/IRWS.2004.1422759
Filename
1422759
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