DocumentCode
3073942
Title
Circuit and silicide impact on the correlation between TLP and ESD (HBM and MM)
Author
Huang, S.C. ; Lee, J.H. ; Lee, S.C. ; Chen, K.M. ; Song, M.H. ; Chiang, C.Y. ; Chang, Mi-Chang
Author_Institution
Taiwan Semicond. Manuf. Co., Hsin Chu, Taiwan
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
169
Lastpage
172
Abstract
Transmission line pulse (TLP) measurements have been shown to correlate well with ESD performance in most cases. However, some recent researches suggested in some cases miscorrelation can happen. A test chip was designed and fabricated in TSMC 0.13 μm technology to test this correlation. We found that in some conditions, TLP measurements (IT2) do not correlate well with ESD testing in both human body and machine models.
Keywords
correlation methods; electrostatic discharge; integrated circuit testing; semiconductor device testing; 0.13 mm; ESD performance; ESD testing; HBM; IT2; MM; TLP-ESD correlation; human body models; machine models; transmission line pulse measurement; Circuit testing; Current measurement; Driver circuits; Electrostatic discharge; Equations; Inverters; MOS devices; Protection; Silicides; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN
0-7803-8517-9
Type
conf
DOI
10.1109/IRWS.2004.1422766
Filename
1422766
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