DocumentCode
3075295
Title
Polysilicon piezoresistive pressure sensor and its temperature compensation
Author
Hongwei, Qu ; Suying, Yao ; Rong, Zhang ; Ganru, Mao ; Weixin, Zhang ; Xiaoqiang, Ma ; Lei, Ling
Author_Institution
Dept. of Microelectron., Tianjin Univ., China
fYear
1998
fDate
1998
Firstpage
914
Lastpage
916
Abstract
The polysilicon sensor is one of the most prospective pressure sensors because of its good performance at relatively high temperature. In this paper we put forward a technique to compensate its negative sensitivity temperature drift that prohibits its successful utilization in wide range of temperature. The technique is inexpensive and easy to practice in applications
Keywords
elemental semiconductors; high-temperature electronics; piezoresistive devices; pressure sensors; silicon; Si; high temperature; negative sensitivity temperature drift; polysilicon piezoresistive pressure sensor; polysilicon sensor; temperature compensation; Bridge circuits; Doping; Ion implantation; Piezoresistance; Resistors; Sensor phenomena and characterization; Silicon; Stress; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.786518
Filename
786518
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