DocumentCode
3076995
Title
Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation
Author
Masuda, Yoichiro ; Fujita, Shigetaka ; Nishida, Takashi ; Masumoto, Hiroshi ; Hirai, Toshio
Author_Institution
Dept. of Electr. Eng., Hachinohe Inst. of Technol., Japan
fYear
1998
fDate
1998
Firstpage
23
Lastpage
26
Abstract
Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ=266 nm) of a pulsed Nd 3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As a result, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer
Keywords
dielectric polarisation; ferroelectric capacitors; ferroelectric switching; ferroelectric thin films; lead compounds; pulsed laser deposition; thin film capacitors; PZT; Pb(Zr,Ti)O3 thin films; PbZrO3TiO3; Pt; Pt thin film electrode; SrRuO3; SrRuO3 thin film electrode; buffer layer; degradation; ferroelectric thin film capacitors; ferroelectric thin films; fourth harmonic wave; perovskite; polarization switching degradation; pulsed Nd3+:YAG laser ablation technique; pulsed laser ablation; remanent polarization value; Buffer layers; Degradation; Electrodes; Ferroelectric materials; Laser ablation; Neodymium; Optical pulses; Platinum; Polarization; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location
Montreux
ISSN
1099-4734
Print_ISBN
0-7803-4959-8
Type
conf
DOI
10.1109/ISAF.1998.786627
Filename
786627
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