Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non-destructive readout memory devices

Author

Kim, Y.T. ; Lee, C.W. ; Shin, D.S. ; Lee, H.N.

Author_Institution

Semicond. Mater. Lab., Korea Inst. of Sci. & Technol., Seoul, South Korea

fYear

1998

fDate

1998

Firstpage

35

Lastpage

38

Abstract

Current and voltage characteristics of MEFISFETs using different insulators show that CeO₂ or Y₂O₃ insulator performs an excellent role to prevent the reduction of coercive field in the SrBi₂Ta₂O₉ (SBT) film and the interaction between the SBT and Si. The memory window of the MEFISFET using CeO₂ or Y₂O₃ insulator is about 1.25 V at the gate voltage of 5 V, and its drain current level (write/read state) is 10^-4 A. Whereas, the memory window of the MEFISFET using SiO₂ is 0.25 V at the same gate voltage and the drain current level is only 10^-6 A

Keywords

MISFET; bismuth compounds; cerium compounds; ferroelectric storage; ferroelectric thin films; strontium compounds; yttrium compounds; 1E-4 A; 5 V; CeO₂; MEFISFET nondestructive readout memory devices; Si; SiO₂; SrBi₂Ta₂O₉; Y₂O₃; coercive field; current characteristics; drain current level; gate voltage; insulator effect; memory window; metal-ferroelectric-insulator-semiconductor-field effect transistor; voltage characteristics; Capacitors; Dielectrics and electrical insulation; Ferroelectric films; Ferroelectric materials; Metal-insulator structures; Nonvolatile memory; Random access memory; Semiconductor films; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on

Conference_Location

Montreux

ISSN

1099-4734

Print_ISBN

0-7803-4959-8

Type

conf

DOI

10.1109/ISAF.1998.786630

Filename

786630