DocumentCode
3077170
Title
Low-temperature preparation and characterization of SrxBi2+yTa2O9/SiO2 /Si structure for MFOS memory FET
Author
Matsumuro, Yoshinori ; Sugiyama, Hideki ; Noda, Minoru ; Okuyama, Masanori
Author_Institution
Osaka Univ., Japan
fYear
1998
fDate
1998
Firstpage
59
Lastpage
62
Abstract
Preferentially (105)-oriented Sr0.7Bi2.8Ta 2O9 thin films on SiO2/n-Si(100) have been prepared by laser ablation at low temperature as low as 350°C, which is the lowest process temperature for growing a SBTO ferroelectric thin film. Dielectric properties of the SBTO film have been improved by increasing Sr/Bi atomic ratio from 0.7/2.8 to 0.7/2.0. A memory window of as large as 3.6 V in the MFOS capacitor has been obtained at the Sr/Bi of 0.7/2.0 and is the largest value in the MF(I)S diode structures. Also little C-V degradation is observed for Sr/Bi of 0.7/2.0 up to fatigue cycle over 1010, keeping memory window of more than 3.2 V. It should be emphasized that improvement in memory characteristics is strongly related to insulating properties of the ferroelectric and dielectric thin films rather than its value of dielectric constant
Keywords
bismuth compounds; dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric storage; ferroelectric thin films; permittivity; pulsed laser deposition; strontium compounds; (105)-oriented Sr0.7Bi2.8Ta2O 9 thin films; 3.6 V; 350 C; C-V degradation; MFOS memory FET; Sr0.7Bi2.8Ta2O9; SrxBi2+yTa2O9/SiO 2/Si structure; characterization; dielectric constant; dielectric properties; ferroelectric thin film; laser ablation; low-temperature preparation; memory window; Atomic beams; Bismuth; Capacitors; Dielectric films; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Laser ablation; Strontium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1998. ISAF 98. Proceedings of the Eleventh IEEE International Symposium on
Conference_Location
Montreux
ISSN
1099-4734
Print_ISBN
0-7803-4959-8
Type
conf
DOI
10.1109/ISAF.1998.786636
Filename
786636
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