• DocumentCode
    3079606
  • Title

    Plasmon resonances in a gated two-dimensional electron system with lateral contacts

  • Author

    Popov, V.V. ; Polischuk, O.V.

  • Author_Institution
    Kotelnikov Inst. of Radio Eng. & Electron. RAS, Saratov, Russia
  • fYear
    2009
  • fDate
    Nov. 3 2009-Oct. 6 2009
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    It is shown that plasmon resonances can be effectively excited in the totally screened two-dimensional electron gas channel with lateral contacts at terahertz frequencies. The linewidth of the plasmon resonance in the totally screened two-dimensional electron gas with lateral contacts shrinks down to the electron scattering contribution, which is the minimal theoretical value for the plasmon resonance linewidth.
  • Keywords
    semiconductor heterojunctions; surface plasmon resonance; two-dimensional electron gas; electron gas channel; gated 2D electron system; lateral contacts; plasmon resonance; Absorption; Dielectric constant; Electrons; Frequency; Indium compounds; Indium gallium arsenide; Plasmons; Resonance; Scattering; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
  • Conference_Location
    Turunc-Marmaris
  • Print_ISBN
    978-1-4244-3848-8
  • Electronic_ISBN
    98-1-4244-3849-5
  • Type

    conf

  • DOI
    10.1109/TERAMIR.2009.5379628
  • Filename
    5379628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3079606