DocumentCode
3080051
Title
Electron-beam lithographed metamaterial devices operating in the terahertz region
Author
Chicki, N. ; Di Gennaro, E. ; Esposito, E. ; Andreone, A.
Author_Institution
Dept. of Phys., Univ. of Naples Federico II, Naples, Italy
fYear
2009
fDate
Nov. 3 2009-Oct. 6 2009
Firstpage
11
Lastpage
12
Abstract
Direct electron-beam lithography (EBL) was exploited to fabricate metamaterial devices operating in the terahertz (THz) region. Simulation show that, in order to reach the required frequency range, optimized metallic structures deposited on silicon must have submicron features. The effect of an external parameter, such as the substrate doping, is also studied.
Keywords
electron beam lithography; metamaterials; optoelectronic devices; electron-beam lithography; frequency range; metamaterial devices; submicron features; substrate doping; terahertz region; Conductivity; Conferences; Frequency; Geometry; Liquid crystals; Metamaterials; Polymers; Resists; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Conference_Location
Turunc-Marmaris
Print_ISBN
978-1-4244-3848-8
Electronic_ISBN
98-1-4244-3849-5
Type
conf
DOI
10.1109/TERAMIR.2009.5379652
Filename
5379652
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