A TCAD approach to evaluate channel electron density of double gate symmetric n-tunnel FET

In this paper a TCAD method to determine surface electron density of a three terminal (3T) symmetric double gate silicon n-tunnel FET (DG Si nTFET) is presented. This research paper presents the changes in the channel surface electron density of symmetric n-Tunnel Field Effect Transistor (nTFET) devices. The physical reasoning behind the modeling approach has also been presented. It has been observed that the electron density in n-TFET, goes much beyond the doping concentration in channel. Also, unlike MOSFET, the electron density in subthreshold regime depends on the drain voltage. For lower drain voltages (<;0.4V) the electron density is much higher than the doping concentration in channel, but for higher drain voltages, electron density below threshold might be much lesser than the channel doping concentration.