Monolayer graphene mode-locked 63-fs Ti:sapphire laser

Author

Kim, Jun Wan ; Baek, In Hyung ; Lee, Hwang Woon ; Bae, Sukang ; Hong, Byung Hee ; Ahn, Yeong Hwan ; Yeom, Dong-Il ; Rotermund, Fabian

Author_Institution

Dept. of Phys., Ajou Univ., Suwon, South Korea

fYear

2012

fDate

2-6 July 2012

Firstpage

673

Lastpage

674

Abstract

Passive mode-locking of a Ti:sapphire laser employing monolayer graphene as saturable absorber was demonstrated for the first time. The large-area, high-quality monolayer graphene was fabricated by chemical vapor deposition method. Without any additional treatment, monolayer graphene shows ultrafast recovery time and nonlinear absorption properties appropriate for the bulk laser mode-locking near 800 nm. The graphene mode-locked Ti:sapphire laser delivers 63-fs pulses with a maximum output power of 480 mW.

Keywords

chemical vapour deposition; laser mode locking; optical fabrication; optical films; sapphire; solid lasers; titanium; Al₂O₃:Ti; Ti:sapphire laser; chemical vapor deposition method; maximum output power; monolayer graphene; nonlinear absorption properties; passive mode-locking; saturable absorber; time 63 fs; ultrafast recovery time; Absorption; Chemical lasers; Fiber lasers; Laser mode locking; Photonics; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Opto-Electronics and Communications Conference (OECC), 2012 17th

Conference_Location

Busan

ISSN

2166-8884

Print_ISBN

978-1-4673-0976-9

Electronic_ISBN

2166-8884

Type

conf

DOI

10.1109/OECC.2012.6276785

Filename

6276785