Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions

We tested a commercial 1 Gbit 90 nm NAND memory under exposure to a constant flux of heavy ions, aiming to study its behaviour in the space environment. We identified and classified different types of errors under various operating conditions. We observed single bit upsets both in the floating gate array and in the page buffer, alongside with functional interruptions during program and, to a lesser extent, erase operations. Our results provide some insight on possible issues which may arise also at sea-level with future (and more sensitive) flash generations.