• DocumentCode
    3084316
  • Title

    New four-phase generation circuits for low-voltage charge pumps

  • Author

    Lin, Hongchin ; Chen, Nai-Hsien

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
  • Volume
    1
  • fYear
    2001
  • fDate
    6-9 May 2001
  • Firstpage
    504
  • Abstract
    A new four-phase clock generator for the four-phase charge pumping circuits for very low supply voltages using 0.5 μm double poly CMOS technology to generate high boosted voltages is presented. With the new clock generator, the ten-stage charge pump can efficiently pump to 9 V at supply voltage of 1 V
  • Keywords
    CMOS digital integrated circuits; clocks; low-power electronics; 0.5 micron; 1 V; 9 V; double poly CMOS technology; four-phase clock generator; low-voltage charge pumping circuit; CMOS technology; Charge pumps; Circuits; Clocks; Degradation; Low voltage; MOSFETs; Random access memory; Resistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-6685-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2001.921903
  • Filename
    921903