Electromigration simulation under DC/AC stresses considering microstructure

Author

Zhang, Wei ; Bernstein, Joseph B.

Author_Institution

Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA

fYear

1999

fDate

1999

Firstpage

41

Lastpage

43

Abstract

In this work, we present a dynamic finite difference simulation on the stress evolution along an IC interconnect under both DC and AC current densities, while taking into account the inhomogeneity of grain size and grain boundary orientation. Furthermore, we related both the accelerating stress and microstructural conditions to the lifetime by assuming certain built-up stress levels as failure criteria

Keywords

circuit simulation; current density; electromigration; failure analysis; finite difference methods; grain boundaries; grain size; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; AC current density; AC stress; DC current density; DC stress; IC interconnect; accelerating stress; built-up stress levels; dynamic finite difference simulation; electromigration simulation; failure criteria; grain boundary orientation; grain size inhomogeneity; lifetime; microstructural conditions; microstructure; stress evolution; Acceleration; Current density; Educational institutions; Electromigration; Finite difference methods; Grain boundaries; Grain size; Microstructure; Occupational stress; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787072

Filename

787072