Electron spin resonance (ESR) characterization of defects in low-k dielectrics

Author

Moussavi, M. ; Passemard, G. ; Maisonobe, J.C. ; Turek, P.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

1999

fDate

1999

Firstpage

50

Lastpage

52

Abstract

For the first time, the electron spin resonance (ESR) technique has been used for quantitative determination of carbon centered defects in aromatic polyether dielectric films. These defects, due to unpaired electrons, are linked to the annealing temperature and can not be evidenced by another method since structural modifications do not necessarily take place

Keywords

annealing; dielectric thin films; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; paramagnetic resonance; polymer films; ESR defect characterization; annealing temperature; aromatic polyether dielectric films; carbon centered defects; electron spin resonance; electron spin resonance defect characterization; low-k dielectrics; structural modifications; unpaired electrons; Annealing; Crosstalk; Dielectric films; Electrons; Failure analysis; Paramagnetic resonance; Plasma temperature; Polymers; Spectroscopy; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787075

Filename

787075