DocumentCode
3085342
Title
RF circuit design aspects of spiral inductors on silicon
Author
Burghartz, J. ; Edelstein, D. ; Soytter, M. ; Ainspan, H. ; Jenkins, K.
Author_Institution
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1998
fDate
5-7 Feb. 1998
Firstpage
246
Lastpage
247
Abstract
In this experiment, the substrate silicon is removed using micromachining techniques, and the remaining thin-film structure is bonded onto a quartz substrate. The micromachined inductor has Q/sub MAX//spl ap/60 at 6 GHz. The lower resistivity and the greater conductor thickness of copper (Cu) compared to the aluminum (Al) process leads to a 3-4/spl times/ increased Q/sub MAX/ over the entire range of feasible inductance values.
Keywords
integrated circuit design; 6 GHz; RF circuit design; Si; conductor thickness; feasible inductance values; micromachined inductor; micromachining techniques; resistivity; spiral inductors; thin-film structure; Circuit synthesis; Copper; Micromachining; Radio frequency; Semiconductor thin films; Silicon; Spirals; Substrates; Thin film circuits; Thin film inductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-4344-1
Type
conf
DOI
10.1109/ISSCC.1998.672454
Filename
672454
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