DocumentCode
3085665
Title
20-nm magnetic domain wall motion memory with ultralow-power operation
Author
Fukami, Shunsuke ; Yamanouchi, Masato ; Kim, K.-J. ; Suzuki, Takumi ; Sakimura, Noboru ; Chiba, D. ; Ikeda, Shoji ; Sugibayashi, Tadahiko ; Kasai, Naoki ; Ono, Takahito ; Ohno, Hideo
Author_Institution
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
fYear
2013
fDate
9-11 Dec. 2013
Abstract
We study the write and retention properties of magnetic domain wall (DW)-motion memory devices with the dimensions down to 20 nm. We find that the write current and time are scaled along with device size while sufficient thermal stability and low error rate are maintained. As a result, ultralow-power (a few fJ) and reliable operation is possible even at reduced dimensions.
Keywords
MRAM devices; magnetic domain walls; magnetic domain wall motion memory; size 20 nm; thermal stability; ultralow power operation; write current; Error analysis; Integrated circuits; Magnetic fields; Mathematical model; Resistance; Thermal stability; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724553
Filename
6724553
Link To Document