Optimal Ni/Co thickness extraction and two step rapid thermal process of the nickel-silicide for nanoscale complementary metal oxide semiconductor (CMOS) application

Author

Yun, Jang-Gn ; Oh, Soon-Young ; Ji, Hee-Hwan ; Huang, Bin-Feng ; Park, Young-Ho ; Park, Seong-Hyung ; Lee, Heui-Seung ; Kim, Dae-Byung ; Kim, Ui-Sik ; Cha, Han-Seob ; Hu, Sang-Bum ; Lee, Jeong-Gun ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnarn Nat. Univ., Daejeon, South Korea

fYear

2004

fDate

15-16 March 2004

Firstpage

127

Lastpage

130

Abstract

NiSi is an attractive silicide material to be applied in the nanoscale CMOSFETs. However, degradation of NiSi film after the post-silicidation annealing is one of serious demerits of NiSi. Ni/Co bi-layer is known as one of the most stable silicide structure for the improvement of the thermal stability. The formed bi-layer consists of the upper protection layer (CoSi_x) and the lower conduction layer (NiSi) and their roles are different from each other. In this study, optimization of Ni/Co ratio and process condition is investigated for the nanoscale CMOSFETs.

Keywords

CMOS integrated circuits; nanostructured materials; rapid thermal annealing; rapid thermal processing; thermal stability; CoSi_x; Ni-Co; Ni/Co thickness extraction; NiSi; Si; lower conduction layer; nanoscale complementary metal oxide semiconductor; post-silicidation annealing; two step rapid thermal process; upper protection layer; CMOS process; CMOSFETs; Protection; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Semiconductor materials; Silicides; Thermal degradation; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306775

Filename

1306775