Dopant redistribution induced by Ni silicidation at 300°C

Author

Jiang, Yu-Long ; Agarwal, Abhishek ; Ru, Guo-Ping ; Qu, Xin-Ping ; Li, Bing-Zong

Author_Institution

Axcelis Technol., Inc., Beverly, MA, USA

fYear

2004

fDate

15-16 March 2004

Firstpage

139

Lastpage

142

Abstract

The dopant (arsenic and boron) redistribution induced by Ni silicidation at 300°C is investigated by cross-section transmission electron microscopy and secondary ion mass spectroscopy. The dopant segregation at silicide/Si interface is observed. Also a high concentration dopant peak near silicide surface is revealed and attributed to void layer formation due to Kirkendall voiding effect and volume reduction after silicidation. The re-segregation during the conversion from Ni₂Si to NiSi contributes an extra boron peak in the middle region of the formed silicide film on P+/N Si.

Keywords

arsenic; boron; doping profiles; elemental semiconductors; impurity distribution; nickel compounds; secondary ion mass spectra; segregation; silicon; transmission electron microscopy; 300 degC; Kirkendall voiding effect; Ni silicidation; NiSi₂-Si:As; NiSi₂-Si:B; NiSi₂/Si:As; NiSi₂/Si:B; cross-section transmission electron microscopy; dopant redistribution; dopant segregation; secondary ion mass spectroscopy; void layer formation; volume reduction; Annealing; Boron; Conductivity; Mass spectroscopy; Semiconductor films; Silicidation; Silicides; Substrates; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306778

Filename

1306778