New effect of Ti-capping layer in Co salicide process promising for deep sub-quarter micron technology

Author

Ku, Ja-Hum ; Kim, Chul-Sung ; Choi, Chul-Joon ; Fujihara, Kazuyuki ; Kang, Ho-Kyu ; Lee, Moon-Yong ; Chung, Ju-Hyuck ; Lee, Eung-Joon ; Lee, Jang-Eun ; Ko, Dae-Hong

Author_Institution

Div. of Semicond. R&D, Samsung Electron., Yongin City, South Korea

fYear

1999

fDate

1999

Firstpage

256

Lastpage

258

Abstract

A new effect of the titanium (Ti) capping layer on cobalt (Co) silicide formation, which is promising for salicidation applications in deep sub-quarter micron devices, was investigated. TEM, SIMS, and XRD data suggest that Ti on top of the cobalt layer diffuses into the Co/Si interface and dissociates the thin silicon oxide at the interface during RTA. As a result, with a Co/Ti process, the sensitivity of Co salicide processes to surface conditions could be minimized, which gives a larger process window to fabricate deep sub-quarter micron devices

Keywords

X-ray diffraction; chemical interdiffusion; cobalt compounds; dissociation; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; rapid thermal annealing; secondary ion mass spectra; titanium; transmission electron microscopy; 0.25 micron; Co salicide process; Co salicide process sensitivity; Co/Si interface; Co/Ti process; CoSi₂; RTA; SIMS; TEM; Ti diffusion; Ti-Co-Si; Ti-capping layer effect; XRD data; cobalt layer; cobalt silicide formation; interface thin silicon oxide dissociation; process window; salicidation applications; surface conditions; titanium capping layer; Ceramics; Chemicals; Cobalt; Hafnium; Silicides; Silicon; Strips; Temperature; Tin; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787137

Filename

787137