DocumentCode
3086004
Title
The inhomogeneity of Co/p-poly-Si0.84Ge0.16 Schottky contact
Author
Wang, Guang-Wei ; Ru, Guo-Ping ; Qu, Xin-Ping ; Li, Bing-Zong
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2004
fDate
15-16 March 2004
Firstpage
162
Lastpage
165
Abstract
The Schottky junction Co/p-poly-SiGe was formed by deposition of Co on p-poly-SiGe thin film through ion beam sputtering (IBS) technique. Inhomogeneity of the Co/p-poly-SiGe contact was studied by I-V-T method in a wide temperature range. The parameters of the Schottky structure can be extracted from the thermionic emission model precisely. Our results show that both the Schottky barrier height and ideality factor are strongly temperature dependent and weakly bias dependent. It is ascribed to the spatial inhomogeneity of the Co/p-poly-SiGe interface. And it may be helpful to can explain some observed deviations from the ideal metal-semiconductor contact mode.
Keywords
Ge-Si alloys; Schottky barriers; cobalt; semiconductor-metal boundaries; sputtered coatings; thermionic emission; Co-Si0.84Ge0.16; Co/p-poly-Si0.84Ge0.16 Schottky contact; Schottky barrier height; Schottky junction; ideality factor; inhomogeneity; ion beam sputtering; thermionic emission model; Doping; Electrical resistance measurement; Ion beams; Microelectronics; Schottky barriers; Sputtering; Substrates; Temperature dependence; Temperature distribution; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306784
Filename
1306784
Link To Document