DocumentCode
3086041
Title
The effect of different mechanism on the characteristics of SiC Schottky barrier diode
Author
Zhang, Yimen ; Zhang, Yuming ; Wang, Yuehu ; Liang, Renrong
Author_Institution
Inst. of Microelectron., Xidian Univ., China
fYear
2004
fDate
15-16 March 2004
Firstpage
171
Lastpage
174
Abstract
A number of experiments demonstrate that the Schottky barrier height for Metal-SiC is different from the prediction of theory. Based on non-uniform barrier height assumption for metal-SiC contact, a numerical simulation with 2D simulator MEDICI is performed in this paper. The simulation results show that present model matches the experimental data very well. Patch defects make the Schottky barrier height decreased. This may give a reasonable explanation for the nonideal behaviors observed from many experiments. The effect of interface state density on Schottky barrier height is also discussed.
Keywords
Schottky barriers; interface states; silicon compounds; wide band gap semiconductors; 2D simulator MEDICI; Schottky barrier height; SiC Schottky barrier diode; characteristics; interface state density; nonuniform barrier height assumption; Medical simulation; Numerical models; Numerical simulation; Poisson equations; Schottky barriers; Schottky diodes; Silicon carbide; Space charge; Temperature; Thermionic emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Print_ISBN
0-7803-8191-2
Type
conf
DOI
10.1109/IWJT.2004.1306786
Filename
1306786
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