DocumentCode
3086051
Title
K-band Si MMIC amplifier and mixer using three-dimensional masterslice MMIC technology
Author
Nishikawa, K. ; Toyoda, I. ; Kamogawa, K. ; Tokumitsu, T. ; Yamaguchi, C. ; Hirano, M.
Author_Institution
NTT Wireless Syst. Labs., Kanagawa, Japan
fYear
1998
fDate
5-7 Feb. 1998
Firstpage
252
Lastpage
253
Abstract
Recently-developed Si MMICs with high-performance Si devices or on-chip inductors are limited to X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMIC uses three-dimensional (3D) masterslice MMIC technology to overcome these problems.
Keywords
MMIC amplifiers; K-Band; MMIC amplifier; MMIC mixer; Si; on-chip inductors; substrate resistivity; three-dimensional masterslice MMIC technology; transmission loss; Coplanar waveguides; Distributed parameter circuits; Gallium arsenide; K-band; MMICs; Microwave transistors; Noise figure; Propagation losses; Resistors; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-4344-1
Type
conf
DOI
10.1109/ISSCC.1998.672457
Filename
672457
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