Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor

A high-performance InGaP/InGaAs/GaAs p-channel pseudomorphic modulation-doped field effect transistor based on p⁺-GaAs/n⁺-InGaP/p-InGaP camel-like gate structure is demonstrated. Due to the p-n depletion of the camel-like gate and the presence of relatively large ΔEv at InGaP/InGaAs heterostructure, an extremely large gate turn-on voltage than 2 V is measured. For a 1×100 μm² device, the experimental results show a maximum saturation current density of -345 mA/mm and a widely broad gate voltage swing than 4 V with 80 % maximum transconductance. Furthermore, the f_T and f_max values are 3.1 and 4.8 GHz, respectively.