A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor

Author

Tsai, Jung-Hui ; Chiu, Shao-Yen ; Chu, Ying-Cheng ; Zhu, King-Pod

Author_Institution

Dept. of Phys., Kaohsiung Normal Univ., Taiwan

fYear

2004

fDate

15-16 March 2004

Firstpage

224

Lastpage

227

Abstract

A functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons at InGaP/GaAs heterojunction and InGaAs quantum well, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60 mV are achieved under normal operation mode. Consequently, the excellent switching characteristic and transistor action of the studied HBT provides a promise for amplifier and multiple-valued logic circuit applications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor quantum wells; semiconductor switches; 60 mV; HBT; InGaP-GaAs-InGaAs; InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor; S-shaped switch; avalanche multiplication; discontinuous confinement effects; quantum well; triple-route S-shaped negative-differential-resistance switch; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Logic circuits; Low voltage; Performance gain; Switches; Switching circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306800

Filename

1306800