An asymmetrical source/drain junction structure for SOI RFIC: immune to floating body effects

Author

Yang, R. ; Li, J.E. ; Qian, H. ; Han, Z.S.

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

fYear

2004

fDate

15-16 March 2004

Firstpage

273

Lastpage

276

Abstract

Novel integration structures of SOI LDMOS/ NMOS/inductor/capacitor/resistor for RFIC are proposed, combined with several key techniques, including body contact with asymmetrical source/drain junctions, SiO₂/Si₃N₄ dual sidewalls and Ti-salicide, etc. These devices are integrated into the SIMOX substrate with simplified process steps. Experimental or simulated results show that floating body effects are well restrained, and DC characteristics are good, while the cutoff frequency of LDMOS is higher than that of conventional devices with lateral body-contact structures.

Keywords

CMOS integrated circuits; MOSFET; UHF integrated circuits; doping profiles; etching; ion implantation; isolation technology; microwave integrated circuits; oxidation; passivation; semiconductor device breakdown; semiconductor process modelling; silicon compounds; silicon-on-insulator; CMOS technology; DC characteristics; LDMOS cutoff frequency; LOCOS isolation; SIMOX substrate; SOI RFIC; SiO₂-Si₃N₄; Ti-salicide; asymmetrical source-drain junction structure; breakdown characteristics; doping profile; dual sidewalls; etch back; floating body effects; front-end circuits; ion implant; passivation; process flow simulation; simplified process steps; thermal oxide; threshold voltage; transfer characteristics; Circuit noise; Immune system; Radio frequency; Radiofrequency integrated circuits; Resistors; Semiconductor films; Silicon; Substrates; Thermal resistance; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306854

Filename

1306854