Studying shallow junction technology by atomistic modeling

Author

Yu, Min ; Huang, Ru ; Shi, Xiaokang ; Huihui Jil ; Zhang, Xing ; Wang, Yangyuan ; Oka, Hideki

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2004

fDate

15-16 March 2004

Firstpage

297

Lastpage

301

Abstract

Atomistic modeling has been applied in studying and simulating the advanced junction technologies. We present in this paper the application of molecular dynamics method in simulation of low energy ion implantation and that of kinetic Monte Carlo method in simulation of enhanced diffusion in annealing. The dose dependent ultra-low energy implantation is well simulated. The simulation indicates that energy contamination is not as serious as it looks. The dissipation of Si extended defects are simulated for both 40 keV and 5 keV Si implantation cases. Enhanced diffusion is simulated.

Keywords

Monte Carlo methods; annealing; diffusion; energy loss of particles; extended defects; ion implantation; molecular dynamics method; secondary ion mass spectra; semiconductor junctions; semiconductor process modelling; RTA; SIMS data; advanced junction technology; atomistic modeling; binary collision approximation; binding energy; dose dependent ultralow energy implantation; energy contamination; enhanced diffusion; extended defects dissipation; ion-solid interaction simulation; kinetic Monte Carlo method; low energy ion implantation simulation; molecular dynamics method; shallow junction technology; slowing-down process; CMOS technology; Computational modeling; Computer science; Doping; Ion implantation; Kinetic theory; Laboratories; Microelectronics; Potential energy; Simulated annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2004. IWJT '04. The Fourth International Workshop on

Print_ISBN

0-7803-8191-2

Type

conf

DOI

10.1109/IWJT.2004.1306861

Filename

1306861