DocumentCode
3087234
Title
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
Author
Rideau, D. ; Niquet, Y.M. ; Nier, O. ; Cros, A. ; Manceau, J.P. ; Palestri, Pierpaolo ; Esseni, David ; Nguyen, Viet Hung ; Triozon, Francois ; Barbe, J.C. ; Duchemin, Ivan ; Garetto, D. ; Smith, Lee ; Silvestri, L. ; Nallet, F. ; Clerc, R. ; Weber, Olivi
Author_Institution
STMicroelectron., Crolles, France
fYear
2013
fDate
9-11 Dec. 2013
Abstract
This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.
Keywords
MOSFET; electrostatics; silicon-on-insulator; technology CAD (electronics); MOSFET; NEGF; TCAD; channel mobility; electrostatics; high-K metal gate UTBB-FDSOI devices; quantum solvers; technology computer assisted design; ultra thin body and box fully depleted silicon on insulator; Capacitance; Data models; Hafnium; High K dielectric materials; Logic gates; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724617
Filename
6724617
Link To Document