• DocumentCode
    3087949
  • Title

    Impact of multi-gate device architectures on digital and analog circuits and its implications on System-On-Chip technologies

  • Author

    Thean, A. ; Wambacq, Piet ; Lee, Jae W. ; Cho, Moon Ju ; Veloso, A. ; Sasaki, Yutaka ; Chiarella, T. ; Miyaguchi, Kenichi ; Parvais, B. ; Bardon, M.G. ; Schuddinck, P. ; Kim, Myung Su ; Horiguchi, Naoto ; Dehan, M. ; Mercha, Abdelkarim ; Van der Plas, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    This paper reviews some important process aspects of aggressively downscaled FinFET technologies and their implications on digital and analog figures of merits (FOMs). The need to downscale device architectures to enhance digital transistor electrostatics and circuit density led to influences in parasitics, variability, and noise, which impact analog FOMs. Therefore, it is important to understand the trade-offs due to the new devices and the upcoming process solutions to address them. Process features, variability and parasitics relevant to 14nm and beyond FinFET will be reviewed and their System-On-Chip (SOC) implications will be discussed.
  • Keywords
    MOSFET; electrostatics; mixed analogue-digital integrated circuits; system-on-chip; FOM; FinFET; SOC; analog circuits; analog figure of merit; circuit density; digital circuits; digital transistor electrostatics; multigate device architectures; size 14 nm; system-on-chip technology; Epitaxial growth; FinFETs; Layout; Logic gates; Noise; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724647
  • Filename
    6724647