Challenges toward millimeter-wave CMOS circuits enhanced by design techniques

Author

Okada, Kenichi

Author_Institution

Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2013

fDate

9-11 Dec. 2013

Abstract

This paper presents several design techniques for enhancing both active and passive device characteristics without any process modification, especially in the millimeter-wave frequency range. A 60-GHz 20-Gb/s wireless transceiver employing the techniques is also demonstrated in 65-nm CMOS.

Keywords

CMOS integrated circuits; integrated circuit design; millimetre wave integrated circuits; radio transceivers; active device characteristics; bit rate 20 Gbit/s; design techniques; frequency 60 GHz; millimeter-wave CMOS circuits; millimeter-wave frequency range; passive device characteristics; process modification; size 65 nm; wireless transceiver; Gain; Layout; Logic gates; Millimeter wave transistors; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724649

Filename

6724649

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3088000