• DocumentCode
    3090877
  • Title

    Design of a Low-Voltage CMOS Charge Pump

  • Author

    Cheng, Chun Yu ; Leung, Ka Nang ; Sun, Yi Ki ; Or, Pui Ying

  • Author_Institution
    Chinese Univ. of Hong Kong, Hong Kong
  • fYear
    2008
  • fDate
    23-25 Jan. 2008
  • Firstpage
    342
  • Lastpage
    345
  • Abstract
    A charge pump based on the cross-coupled structure generates a 2x VDD output. The circuit delivering 10 mA@VDD = 0.9 V from a single NiMH battery is designed in a commercial 0.35 mum CMOS process. The design operates at a supply voltage as low as VDD = 0.9 V with efficiency of better than 80% and the maximum VDD is 1.4V. The implementation method of the cross-coupled charge pump is summarized in this paper.
  • Keywords
    CMOS integrated circuits; integrated circuit design; low-power electronics; secondary cells; Ni-JkH; cross-coupled structure; current 10 mA; low-voltage CMOS charge pump design; single battery; voltage 0.9 V; voltage 1.4 V; Capacitors; Charge pumps; Clocks; Electronic equipment testing; MOSFET circuits; Power supplies; Power transistors; Steady-state; Switches; Voltage; Charge pump; efficiency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Design, Test and Applications, 2008. DELTA 2008. 4th IEEE International Symposium on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-0-7695-3110-6
  • Type

    conf

  • DOI
    10.1109/DELTA.2008.48
  • Filename
    4459568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3090877