Millimetre wave metamorphic HEMT amplifiers

Author

Varonen, Mikko ; Karkkainen, Mikko ; Kantanen, Mikko ; Karttaavi, Timo ; Kangaslahti, Pekka ; Halonen, Kari

Author_Institution

Helsinki University of Technology, Electronic Circuit Design Laboratory, Espoo, P.O. Box 3000, FI-02015 HUT, Finland

fYear

2004

fDate

8-9 Nov. 2004

Firstpage

8

Lastpage

11

Abstract

We present a medium power amplifier covering frequency range from 18 GHz to 40 GHz and two low noise amplifiers for 94 GHz cloud profiling radar. These integrated amplifiers were manufactured using a 0.15 μm GaAs based metamorphic high electron mobility transistor (MHEMT) technology. We measured in on-wafer tests for the medium power amplifier, a small-signal gain of 22.5 ± 2.5 dB at K-and Ka-bands. The measured 1 dB output compression point is better than t13 dBm at K-band and better than +9.5 dBm at Ka-band using a 2.5 volts supply. The scattering parameters and the noise figures of the low noise amplifiers were measured at W-band and the results are presented. The best measured gain at 94 GHz was 16 dB and the noise figure 5.7 dB using a supply voltage of 25 V and current of 60 mA.

Keywords

Clouds; Feedback; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; Millimeter wave technology; Noise figure; Power amplifiers; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Norchip Conference, 2004. Proceedings

Conference_Location

Oslo, Norway

Print_ISBN

0-7803-8510-1

Type

conf

DOI

10.1109/NORCHP.2004.1423809

Filename

1423809