• DocumentCode
    3092971
  • Title

    On the efficacy of input Vector Control to mitigate NBTI effects and leakage power

  • Author

    Wang, Yu ; Chen, Xiaoming ; Wang, Wenping ; Balakrishnan, Varsha ; Cao, Yu ; Xie, Yuan ; Yang, Huazhong

  • Author_Institution
    Dept. of E.E., Tsinghua Univ., Beijing
  • fYear
    2009
  • fDate
    16-18 March 2009
  • Firstpage
    19
  • Lastpage
    26
  • Abstract
    As technology scales, the aging effect caused by Negative Bias Temperature Instability (NBTI) has become a major reliability concerns for circuit designers. Consequently, we have seen a lot of research efforts on NBTI analysis and mitigation techniques. On the other hand, reducing leakage power remains to be one of the major design goals. Both NBTI-induced circuit degradation and standby leakage power have a strong dependency on the input patterns of circuits. In this paper, we propose a co-simulation flow to study NBTI-induced circuit degradation and leakage power, taking into account the different behaviors between circuit active and standby time. Based on this flow, we evaluate the efficacy of Input Vector Control (IVC) technique on mitigating circuit aging and reducing standby leakage power with experiments on bench-mark circuits that are implemented in 90 nm, 65 nm, and 45 nm technology nodes. The IVC technique is proved to be effective to mitigate NBTI-induced circuit degradation, saving up to 56% circuit performance degradation at 65 nm technology node, and on average 30% circuit performance degradation across different technology nodes. Meanwhile, IVC technique can save up to 18% of the worst case leak-age power. Since leakage power and NBTI-induced circuit degradation have different dependencies on the input patterns, we propose to derive Pareto sets for designers to explore trade-offs between the life-time reliability and leakage power.
  • Keywords
    CMOS integrated circuits; Pareto analysis; ageing; integrated circuit modelling; integrated circuit reliability; NBTI effects; NBTI-induced circuit degradation; Pareto sets; aging effect; circuit aging; circuit designers; circuit performance degradation; input vector control technique; leakage power; life-time reliability; mitigation techniques; negative bias temperature instability; reliability; size 45 nm; size 65 nm; size 90 nm; standby leakage power; Aging; Circuit optimization; Degradation; MOS devices; MOSFETs; Negative bias temperature instability; Niobium compounds; Performance analysis; Threshold voltage; Titanium compounds; Negative Bias Temperature Instability (NBTI); input vector control (IVC); leakage power reduction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-2952-3
  • Electronic_ISBN
    978-1-4244-2953-0
  • Type

    conf

  • DOI
    10.1109/ISQED.2009.4810264
  • Filename
    4810264