DocumentCode
3093155
Title
New current-mode sense amplifiers for high density DRAM and PIM architectures
Author
Yoo, Seung-Moon ; Kim, Chulwoo ; Jung, Seong-Ook ; Baek, Kwang-Hyun ; Kang, Sung-Mo
Author_Institution
Dept. of Electr. Eng., Illinois Univ., Urbana, IL, USA
Volume
4
fYear
2001
fDate
6-9 May 2001
Firstpage
938
Abstract
This paper describes new current-mode sense amplifiers for high density DRAM and PIM architectures. New dynamic-load latch-type and hybrid-type current-mode amplifiers are proposed and evaluated in terms of delay, power-delay product and energy-delay product for aluminum and copper interconnects
Keywords
DRAM chips; current-mode circuits; delays; feedback amplifiers; integrated circuit interconnections; memory architecture; microprocessor chips; PIM architectures; current-mode sense amplifiers; dynamic-load hybrid-type current-mode amplifiers; dynamic-load latch-type current-mode amplifiers; energy-delay product; high density DRAM; interconnects; power-delay product; Aluminum; Bandwidth; Copper; Delay; Impedance; Integrated circuit interconnections; Microprocessors; Power system interconnection; Random access memory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2001. ISCAS 2001. The 2001 IEEE International Symposium on
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6685-9
Type
conf
DOI
10.1109/ISCAS.2001.922393
Filename
922393
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