• DocumentCode
    3093377
  • Title

    Technology impacts on sub-90nm CMOS circuit design & design methodologies

  • Author

    Puri, R. ; Karnik, T. ; Joshi, R.

  • Author_Institution
    IBM TJ Watson Res. Center, Yorktown, NY, USA
  • fYear
    2006
  • fDate
    3-7 Jan. 2006
  • Abstract
    Summary form only for tutorial. This tutorial discusses design challenges of scaled CMOS circuits in sub-90nm technologies and the design methodologies required to design them in order to produce robust designs with desired power performance trade-off. It is increasingly difficult to sustain supply and threshold voltage scaling to provide the required performance increase, limit energy consumption, control power dissipation, and maintain reliability. These requirements pose several difficulties across a range of disciplines. On the technology front, the question arises whether we can continue along the traditional CMOS scaling path - reduce effective oxide thickness, improve channel mobility, and minimize parasitics. On the design front, researchers are exploring various circuit design techniques to deal with process variation, leakage and soft errors.
  • Keywords
    CMOS integrated circuits; circuit optimisation; integrated circuit design; integrated circuit reliability; CMOS circuit design; CMOS scaling path; channel mobility; energy consumption; oxide thickness reduction; power dissipation control; threshold voltage scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on
  • Conference_Location
    Hyderabad, India
  • ISSN
    1063-9667
  • Print_ISBN
    0-7695-2502-4
  • Type

    conf

  • DOI
    10.1109/VLSID.2006.156
  • Filename
    1581411