DocumentCode
3093667
Title
Side channel aware leakage management in nanoscale Cryptosystem-on-Chip (CoC)
Author
Zadeh, Amir Khatib ; Gebotys, Catherine
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON
fYear
2009
fDate
16-18 March 2009
Firstpage
230
Lastpage
235
Abstract
This paper investigates the potential security threat to nanoscale cryptosystem-on-chip (CoC) posed by the leakage power consumption. The increasing trend of leakage power is shown to be highly correlated with increasing side channel vulnerability. The effect of high threshold voltage (Vth) transistor assignment on improving side channel resistance is analyzed. This investigation shows growth of the leakage mechanisms such as direct-tunneling and band-to-band tunneling (BTBT) currents may reduce the effectiveness of the high Vth transistor assignment technique; however, this technique can still be used in developing side channel resistant cryptosystem. This research is crucial for security sensitive architecture and the results are obtained leading to side channel aware leakage management in design and implementation of CoC in submicron technology.
Keywords
CMOS digital integrated circuits; cryptography; microprocessor chips; band-to-band tunneling current; direct-tunneling current; leakage power consumption; nanoscale cryptosystem-on-chip; side channel aware leakage management; side channel resistant cryptosystem; side channel vulnerability; submicron technology; threshold voltage transistor assignment; CMOS technology; Data security; Energy consumption; Energy management; Immune system; Information security; Leakage current; Logic; Public key cryptography; Transistors; Cryptosystem-on-Chip (CoC); Leakage power; side channel;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-2952-3
Electronic_ISBN
978-1-4244-2953-0
Type
conf
DOI
10.1109/ISQED.2009.4810299
Filename
4810299
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