• DocumentCode
    3093667
  • Title

    Side channel aware leakage management in nanoscale Cryptosystem-on-Chip (CoC)

  • Author

    Zadeh, Amir Khatib ; Gebotys, Catherine

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON
  • fYear
    2009
  • fDate
    16-18 March 2009
  • Firstpage
    230
  • Lastpage
    235
  • Abstract
    This paper investigates the potential security threat to nanoscale cryptosystem-on-chip (CoC) posed by the leakage power consumption. The increasing trend of leakage power is shown to be highly correlated with increasing side channel vulnerability. The effect of high threshold voltage (Vth) transistor assignment on improving side channel resistance is analyzed. This investigation shows growth of the leakage mechanisms such as direct-tunneling and band-to-band tunneling (BTBT) currents may reduce the effectiveness of the high Vth transistor assignment technique; however, this technique can still be used in developing side channel resistant cryptosystem. This research is crucial for security sensitive architecture and the results are obtained leading to side channel aware leakage management in design and implementation of CoC in submicron technology.
  • Keywords
    CMOS digital integrated circuits; cryptography; microprocessor chips; band-to-band tunneling current; direct-tunneling current; leakage power consumption; nanoscale cryptosystem-on-chip; side channel aware leakage management; side channel resistant cryptosystem; side channel vulnerability; submicron technology; threshold voltage transistor assignment; CMOS technology; Data security; Energy consumption; Energy management; Immune system; Information security; Leakage current; Logic; Public key cryptography; Transistors; Cryptosystem-on-Chip (CoC); Leakage power; side channel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-2952-3
  • Electronic_ISBN
    978-1-4244-2953-0
  • Type

    conf

  • DOI
    10.1109/ISQED.2009.4810299
  • Filename
    4810299